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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2009

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

Résumé

The bipolar amplification and charge collection of Planar Double-Gate MOSFETs and FinFETs with independent gates is investigated. The transient response of independent-gate devices is compared to that of conventional devices having the gates tied together. We show that the bipolar amplification is higher in independent-gate devices than in conventional devices for both positive and negative back gate bias.

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hal-01430111 , version 1 (09-01-2017)

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Daniela Munteanu, Jean-Luc Autran. 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates. IEEE Transactions on Nuclear Science, 2009, 56 (4, 2), pp.2083-2090. ⟨10.1109/TNS.2009.2016343⟩. ⟨hal-01430111⟩
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