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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2011

Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM

S. Martinie
  • Fonction : Auteur
S. Uznanski
  • Fonction : Auteur
P. Roche
  • Fonction : Auteur
G. Gasiot
  • Fonction : Auteur
S. Sauze
  • Fonction : Auteur

Résumé

We report the modeling and simulation of the soft-error rate (SER) in CMOS 130 nm SRAM induced by alpha-particle emission in silicon due to uranium contamination at ppb concentration levels. Monte-Carlo simulation results have been confronted to experimental data obtained from long-duration (>20 000 h) real-time measurements performed at the under-ground laboratory of Modane (LSM) and from experimental counting characterization using an ultra low background alpha-particle gas proportional counter. The calibration of simulations with the measured SER allowed us to determine a U-238 contamination level of 0.37 ppb (considered at secular equilibrium) in very good agreement with both corresponding alpha-particle emissivity levels measured and simulated at wafer-level in the range 1.1 to 2.3 x 10(-3) alpha/cm(2)/h.
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Dates et versions

hal-01430099 , version 1 (09-01-2017)

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Citer

S. Martinie, Jean-Luc Autran, S. Uznanski, P. Roche, G. Gasiot, et al.. Alpha-Particle Induced Soft-Error Rate in CMOS 130 nm SRAM. IEEE Transactions on Nuclear Science, 2011, 58 (3, 2), pp.1086-1092. ⟨10.1109/TNS.2010.2102363⟩. ⟨hal-01430099⟩
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