Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2012

Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM

Résumé

This work reports a long-duration (similar to 3 years) real-time underground experiment of 65 nm SRAM technology at the underground laboratory of Modane (LSM) to quantify the impact of alpha-emitter on the Soft-Error Rate (SER). We developed an original and full analytical charge deposition based on non constant Linear Energy Transfer (LET) to accurately model the diffusion/collection approach. Monte Carlo simulation results based on this improved model have been compared to experimental data to analyze the impact of alpha-particle production inside the circuit silicon material for both single and multiple chip upsets. Finally, the respective contributions of alpha emitters and atmospheric neutrons to the circuit Soft-Error Rate (SER) are evaluated and compared, considering additional real-time measurements performed in altitude on the ASTEP platform.
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Dates et versions

hal-01430088 , version 1 (09-01-2017)

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Sébastien Martinie, Jean-Luc Autran, Sebastien Sauze, Daniela Munteanu, Slawosz Uznanski, et al.. Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM. IEEE Transactions on Nuclear Science, 2012, 59 (4, 1), pp.1048-1053. ⟨10.1109/TNS.2012.2189246⟩. ⟨hal-01430088⟩
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