This work describes a simple way to implement SRIM stopping power and range tabulated data in the form of fast and continuous numerical functions for intensive simulation. We provide here the methodology of this behavioral modeling as well as the details of the implementation and some numerical examples for ions in silicon target. Developed functions have been successfully tested and used for the simulation of soft errors in microelectronics circuits. (C) 2013 Elsevier B.V. All rights reserved.