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Article Dans Une Revue Microelectronics Reliability Année : 2015

3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs

Résumé

Dual-material double-gate (DMDG) structure is a promising structure for future ultra-scaled devices thanks to its capability to reduce short channel effects (SCEs) and hot-carrier induced effects (HCEs). This is due to a step in the surface-potential profile which screens the source side of the channel from drain-potential variations and reduces the drain electric field. In this work, we investigate the DMDG sensitivity to single-event transients. The impact of dual gate material workfunctions on the bipolar gain is particularly addressed. We show that DMDG is naturally less radiation immune than the usual single-material DG (SMDG) devices. (C) 2015 Elsevier Ltd. All rights reserved.
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Dates et versions

hal-01430073 , version 1 (09-01-2017)

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Daniela Munteanu, Jean-Luc Autran. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectronics Reliability, 2015, 55 (9-10), pp.1522-1526. ⟨10.1016/j.microrel.2015.07.022⟩. ⟨hal-01430073⟩
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