Ga2O3 filsm alloyed with SnO2 and treated by RF plasma : an interesting way for the development of transparent contacts for UV-emitting photonics devices
Résumé
Layers of Ga2O3 alloyed up to 15 at% with Sn4+ has been studied after treatment by RF plasma. An increased conductivity was measured which is an interesting step towards transparent contacts for UV-emitting photonics devices.