Dielectric layers involved in top gate organic thin film transistors (TG-OTFFs) have been fabricated by using laser induced forward transfer (LIFT) technique. Poly(methyl methacrylate) (PMMA) as insulating polymer was spin-coated on a quartz substrate and transferred by laser on an acceptor substrate to form a dielectric layer on top of an organic semiconducting layer and source/drain contacts both previously vapour phase deposited. Copper phthalocyanine (CuPc) has been chosen to form p-type organic active layers. The nature of transferred patterns and the efficiency of LIFT confirm the important potential of a laser printing technique in the development of plastic microelectronics. Electrical characterizations in TG configuration demonstrated that transistors are fully operative with hole mobility up to 8.6 x 10(-3) cm(2)/Vs. A comparative study with others dielectric layers in bottom gate transistors (BG-OTFTs), as PMMA spin-coated and silicon dioxide SiO(2), points out more precisely the limiting parameters to an efficient charge transport in the conducting channel created at the interface between PMMA and CuPc. (C) 2011 Elsevier B.V. All rights reserved.