%0 Journal Article %T Ferroelectric and dielectric study of strontium tantalum based perovskite oxynitride films deposited by reactive rf magnetron sputtering %+ Institut d'Électronique et des Technologies du numéRique (IETR) %+ UCCS Équipe Couches Minces & Nanomatériaux %+ Unité de Dynamique et Structure des Matériaux Moléculaires (UDSMM) %+ Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC) %+ Institut des Sciences Chimiques de Rennes (ISCR) %A Le Paven, Claire %A Benzerga, Ratiba %A Ferri, Anthony %A Fasquelle, Didier %A Laur, Vincent %A Le Gendre, Laurent %A Marlec, Florent %A Tessier, Franck %A Cheviré, François %A Desfeux, Rachel %A Saitzek, Sébastien %A Castel, Xavier %A Sharaiha, Ala %< avec comité de lecture %@ 0025-5408 %J Materials Research Bulletin %I Elsevier %V 96 %N Part 2 %P 126-132 %8 2017-12 %D 2017 %R 10.1016/j.materresbull.2016.11.030 %K Oxynitride %K Perovskite %K Thin films %K Reactive sputtering %K Epitaxy %K Permittivity %K Ferroelectricity %Z Chemical Sciences/Material chemistry %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles %X Strontium and tantalum based oxynitride perovskite thin films were deposited by reactive magnetron sputtering. Epitaxial films deposited on Nb-SrTiO3 substrates show smooth surfaces with roughness values from 1.5 to 3.6 nm for a thickness of films in the range 20–1600 nm. The samples are yellow with band gap values around 2.35 eV. Piezo-force microscopy characterization pointed out the local piezoelectric and ferroelectric behavior of the oxynitride perovskite films. In the low frequency range, the 1600 nm-thick film exhibits a permittivity of 175 at 10 kHz, with dielectric losses of 0.055. Permittivity is lowered in high frequencies with a value around 65 obtained on a 1520 nm-thick film deposited on MgO substrate, which is textured with a preferential c-axis orientation. No accordability of the permittivity was highlighted at a macroscopic scale. The moderate crystallographic strain evidenced in the 20 nm thin film does not induce a high permittivity %G English %2 https://hal.science/hal-01404863/document %2 https://hal.science/hal-01404863/file/LePaven_Materials%20Research%20Bulletin_2016b.pdf %L hal-01404863 %U https://hal.science/hal-01404863 %~ UNIV-BREST %~ UNIV-ARTOIS %~ UNIV-NANTES %~ INSTITUT-TELECOM %~ UNIV-RENNES1 %~ CNRS %~ UNIV-LITTORAL %~ UNIV-UBS %~ INSA-RENNES %~ ENSC-RENNES %~ UCCS %~ IETR %~ ISCR %~ SCR_VC %~ IETR_SRC %~ IETR_MF %~ ENIB %~ LAB-STICC %~ CENTRALESUPELEC %~ UR1-SPM %~ INC-CNRS %~ UR1-UFR-SPM %~ UR1-HAL %~ UR1-MATH-STIC %~ UR1-SDLM %~ UR1-UFR-ISTIC %~ IETR-CUTE %~ IETR-FUNMAT %~ IVER %~ IETR-ADH %~ TEST-UNIV-RENNES %~ TEST-UR-CSS %~ UNIV-RENNES %~ UNIV-LILLE %~ INSA-GROUPE %~ INSTITUTS-TELECOM %~ TEST-HALCNRS %~ UR1-MATH-NUM %~ UR1-MMS %~ UCCSARTOIS %~ UDSMM %~ IETR-STAR %~ NANTES-UNIVERSITE %~ UNIV-NANTES-AV2022 %~ TEST2-HALCNRS