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Communication Dans Un Congrès Année : 2016

Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS

Résumé

This paper presents a novel Fully Self-Aligned (FSA) in [9]). In order to achieve this goal, the architecture is fIrstly Si/SiGe HBT architecture using Selective Epitaxial Growth evaluated and optimized by TCAD simulation before (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from launching the fabrication process trials. the Collector (EXBIC). The one is integrated into the bulk area of the 28-nm FD-SOI CMOS technology developed at The fIrst part of the paper presents the fabrication process STMicroelectronics. All the parameters of the architecture such flow and the key features of the EXBIC architecture. In the as the boron-doped base link, the emitter width and height, the second part, electrical performances of this architecture pedestal oxide and sidewall thicknesses are evaluated by TCAD integrated into the bulk area part (called "NO SO" for No SOl) simulation. A low base-collector capacitance, independent from of the C28FD are systematically evaluated by TCAD the extrinsic base doping is obtained. Optimized architecture simulations. All the technological parameters of the exhibits 420 GHZ/T and 780 GHZ/MAX. architecture such as the boron in-situ doped base link, the emitter width and height, the pedestal oxide and sidewall

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Dates et versions

hal-01399885 , version 1 (21-11-2016)

Identifiants

  • HAL Id : hal-01399885 , version 1

Citer

Tuan Van Vu, Didier Celi, Thomas Zimmer, Sebastien Fregonese, Pascal Chevalier. Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE, Sep 2016, New Brunswick, France. ⟨hal-01399885⟩
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