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Communication Dans Un Congrès Année : 2016

An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs

Résumé

In this paper we present an improved self-consistent iterative model for thermal resistance in SiGe HBTs. The pro­ posed model evaluates both the upward and downward heat dissi­ pation from the heat source located at the base-collector junction. Along with the temperature dependency, thermal conductivity degradation due to heavy doping and Ge composition in the base region is included in the proposed model. It is observed that the model accuracy is improved once these physical effects are included along with the upward heat diffusion. Scalability of the proposed model is validated with the measured data for different emitter geometries.
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Dates et versions

hal-01399878 , version 1 (21-11-2016)

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Suresh Balanethiram, Anjan Chakravorty, Rosario D ' Esposito, Sebastien Fregonese, Thomas Zimmer. An improved scalable self-consistent iterative model for thermal resistance in SiGe HBTs. Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2016 IEEE, Sep 2016, New Brunswick, United States. pp.150 - 153, ⟨10.1109/BCTM.2016.7738953⟩. ⟨hal-01399878⟩
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