Communication Dans Un Congrès Année : 2015

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

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hal-01391861 , version 1 (03-11-2016)

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Nicolas Thierry-Jebali, Arthur Vo-Ha, Davy Carole, Mihai Lazar, Gabriel Ferro, et al.. Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport. HeteroSiC-WASMPE, Jun 2013, Nice, France. pp.57 - 60, ⟨10.4028/www.scientific.net/MSF.806.57⟩. ⟨hal-01391861⟩
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