4H-SiC P<sup>+</sup>N UV Photodiodes for Space Applications - Archive ouverte HAL Access content directly
Journal Articles Materials Science Forum Year : 2015

4H-SiC P+N UV Photodiodes for Space Applications


Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed.


Electric power
Not file

Dates and versions

hal-01391847 , version 1 (03-11-2016)



B. Berenguier, Laurent Ottaviani, Stéphane Biondo, Mihai Lazar, Frédéric Milesi, et al.. 4H-SiC P+N UV Photodiodes for Space Applications. Materials Science Forum, 2015, 821-823, pp.644 - 647. ⟨10.4028/www.scientific.net/MSF.821-823.644⟩. ⟨hal-01391847⟩
336 View
0 Download



Gmail Facebook Twitter LinkedIn More