From quasi-static to transient system level ESD simulation: Extraction of turn-on elements - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

From quasi-static to transient system level ESD simulation: Extraction of turn-on elements

Résumé

Transient simulation is a main challenge to achieve system level ESD failure prediction. During the turn-on of the protections, complex phenomena introduce complex transient behaviors. In this paper we investigate the parameters that have to be added to perform accurate transient simulations and we propose a methodology to extract them by measurements.
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Dates et versions

hal-01387072 , version 1 (28-10-2016)

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Fabien Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur. From quasi-static to transient system level ESD simulation: Extraction of turn-on elements. Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2016 38th, ESD Association, Sep 2016, Anaheim, United States. pp.1 - 10, ⟨10.1109/EOSESD.2016.7592563⟩. ⟨hal-01387072⟩
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