Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures - Archive ouverte HAL
Article Dans Une Revue Japanese Journal of Applied Physics Année : 2016

Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures

Résumé

This paper assesses nonpolar m-oriented GaN:Si/Al(Ga)N heterostructures grown on free-standing GaN for intersubband optoelectronics in the short-wavelength, mid- and far-infrared ranges. Characterization results are compared with reference c-plane samples and interpreted by correlation with self-consistent Schrödinger–Poisson calculations. In the near- and mid-infrared regions, we demonstrate m-GaN/Al(Ga)N multiquantum-wells exhibiting room-temperature intersubband absorption tunable in the range of 1.5–5.8 µm (827–214 meV), the long wavelength limit being set by the second order of the Reststrahlen band in the GaN substrates. Extending the study to the far-infrared region, low-temperature intersubband transitions in the 1.5–9 THz range (6.3–37.4 meV) are observed in larger m-plane GaN/AlGaN multi-quantum-wells, covering most of the 7–10 THz band forbidden to GaAs-based technologies.
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Dates et versions

hal-01385180 , version 1 (20-10-2016)

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Caroline B. Lim, Mark Beeler, Akhil Ajay, Jonas Lähnemann, Edith Bellet-Amalric, et al.. Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures. Japanese Journal of Applied Physics, 2016, 55 (5S), pp.05FG05. ⟨10.7567/JJAP.55.05FG05⟩. ⟨hal-01385180⟩
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