Elucidating the effects of gas flow rate on an SF6 inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation
Résumé
Experiments show that the etch rate of Si with SF6 inductively coupled plasma (ICP) issignificantly influenced by the absolute gas flow rate in the range of 50–600 sccm, with amaximum at around 200 sccm. Therefore, we numerically investigate the effects of the gasflow rate on the bulk plasma properties and on the etch rate, to obtain more insight in theunderlying reasons of this effect. A hybrid Monte Carlo—fluid model is applied to simulatean SF6 ICP. It is found that the etch rate is influenced by two simultaneous effects: (i) theresidence time of the gas and (ii) the temperature profile of the plasma in the ICP volume,resulting indeed in a maximum etch rate at 200 sccm.
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|---|
| Licence |