Optimized Power Modules for Silicon Carbide MOSFET
Résumé
A new 3D power module dedicated for SiC
MOSFET is presented based on printed circuit board embedded
die technology and is compared with a standard power module.
After considering the characteristics which contribute to optimal
switching performance from the packaging, both modules are
characterized in terms of dynamic electrical behavior and EMI
emission. The results show better performances of 3D embedded
die module with stray inductance below 2nH and two times less
common mode noise.