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Article Dans Une Revue IEEE Transactions on Microwave Theory and Techniques Année : 2016

On-Wafer Measurement Errors Due to Unwanted Radiations on High-Q Inductors

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This paper investigates the disagreements that may occur between on-wafer measurements and electromagnetic (EM) simulations of high-Q inductive devices. Such disagreements are highlighted on a planar spiral inductor and a 3-D solenoid which exhibit measured maximum Q-factors of 27 and 35 respectively, while 42 and 45 were expected from EM simulations. Both devices are fabricated on high-resistivity substrates. A radiative interaction is identified between RF probe and inductive device under test. By using EM simulations, extra-losses associated with this parasitic effect are fully modeled through the calculation of radiation and dissipation related Q-factors. Adjustments of on-wafer probe setup are proposed to reduce this parasitic effect. Finally, the 3-D solenoid inductor is characterized using a new experimental fixture, and the maximum Q of 45 predicted by EM simulation is retrieved.
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hal-01370500 , version 1 (22-09-2016)

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Olga Bushueva, Christophe Viallon, Ayad Ghannam, Thierry Parra. On-Wafer Measurement Errors Due to Unwanted Radiations on High-Q Inductors. IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (9), pp.2905-2911. ⟨10.1109/TMTT.2016.2588486⟩. ⟨hal-01370500⟩
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