Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Diamond and Related Materials Année : 2015

Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates

Résumé

Boron doped diamond layers have been grown on (110) single crystal diamond substrates with B/C ratios up to 20 ppm in the gas phase. The surface of the diamond layers observed by scanning electron microscopy consists of (100) and (113) micro-facets. Fourier Transform Photocurrent Spectroscopy indicates substitutional boron incorporation. Electrical properties were measured using Hall effect from 150 to 1000 K. Secondary ion mass spectrometry analyses are consistent with the high incorporation of boron determined by electrical measurements. A maximum mobility of 528 cm2 V− 1 s− 1 was measured at room temperature for a charge carrier concentration of 1.1 1013 cm− 3. Finally, properties of boron doped (110) diamond layers are compared with layers on (100) and (111) orientated substrates.
Fichier non déposé

Dates et versions

hal-01364116 , version 1 (12-09-2016)

Identifiants

Citer

Vincent Mortet, Julien Pernot, François Jomard, Ali Soltani, Z. Remes, et al.. Properties of boron-doped epitaxial diamond layers grown on (110) oriented single crystal substrates. Diamond and Related Materials, 2015, 53, pp.29-34. ⟨10.1016/j.diamond.2015.01.006⟩. ⟨hal-01364116⟩
148 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More