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Communication Dans Un Congrès Année : 2015

A 2D THz Si-MOSFET image sensor based on in-pixel demodulation : toward a fully integrated low-cost real-time THz imaging system

Résumé

Since 2008, the smart integrated imagers laboratory (L3I) in CEA-Leti has been focused on THz imaging system using Si-MOSFET detection for low-cost integration. Several circuits were designed and tested and the last one achieves the following performances: NEP of 533 pW and a responsivity of 300 kV/W at 270 GHz.

Domaines

Electronique
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Dates et versions

hal-01354884 , version 1 (19-08-2016)

Identifiants

  • HAL Id : hal-01354884 , version 1

Citer

Nicolas Monnier, Jean-Alain Nicolas, Adnane Boukhayma, Philippe Rostaing, Gilles Sicard, et al.. A 2D THz Si-MOSFET image sensor based on in-pixel demodulation : toward a fully integrated low-cost real-time THz imaging system. Terahertz Days 2015 : 8th conference, Mar 2015, Areche, France. ⟨hal-01354884⟩
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