Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2015

Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions

Résumé

Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real operating conditions. As a direct temperature measurement within a channel is most of the time not achievable, the common approach is to measure the device temperature at different locations close to the hotspot and then to use simulations to estimate the channel temperature. This paper describes a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave. Infrared thermography, charge-coupled device-based thermoreflectance microscopy, and micro-Raman spectroscopy have been performed to extract the thermal resistance of the components. Results have been compared with simulations using a 3-D finite-element model to estimate the operating channel temperature. Measurements have shown that the RF-biased thermal resistance and the dc-biased thermal resistance of GaN HEMTs are similar.
Fichier non déposé

Dates et versions

hal-01348823 , version 1 (25-07-2016)

Identifiants

Citer

Leny Baczkowski, Jean-Claude Jacquet, Olivier Jardel, Christophe Gaquière, myriam moreau, et al.. Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions. IEEE Transactions on Electron Devices, 2015, 62, pp.3992 - 3998. ⟨10.1109/TED.2015.2493204⟩. ⟨hal-01348823⟩
94 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More