<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-01343977</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-22T09:28:32+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies</title>
            <author role="aut">
              <persName>
                <forename type="first">Jean-Guy</forename>
                <surname>Tartarin</surname>
              </persName>
              <email type="md5">db46fd9406c901b50f2f98276459a82a</email>
              <email type="domain">laas.fr</email>
              <idno type="idhal" notation="string">jean-guy-tartarin</idno>
              <idno type="idhal" notation="numeric">6047</idno>
              <idno type="halauthorid" notation="string">19767-6047</idno>
              <idno type="ORCID">https://orcid.org/0000-0001-5801-178X</idno>
              <idno type="IDREF">https://www.idref.fr/08322906X</idno>
              <orgName ref="#struct-388658"/>
              <affiliation ref="#struct-388658"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Serge</forename>
                <surname>Karboyan</surname>
              </persName>
              <idno type="halauthorid">824978-0</idno>
              <affiliation ref="#struct-388658"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">François</forename>
                <surname>Olivié</surname>
              </persName>
              <email type="md5">a74cc352c2e80f4e071083919b7eb927</email>
              <email type="domain">laas.fr</email>
              <idno type="idhal" notation="numeric">831039</idno>
              <idno type="halauthorid" notation="string">117896-831039</idno>
              <orgName ref="#struct-392533"/>
              <affiliation ref="#struct-459"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Guilhem</forename>
                <surname>Astre</surname>
              </persName>
              <idno type="halauthorid">713323-0</idno>
              <affiliation ref="#struct-217752"/>
              <affiliation ref="#struct-388658"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Laurent</forename>
                <surname>Bary</surname>
              </persName>
              <email type="md5">24f1a72b4ef39fda0a40328d8440cc0c</email>
              <email type="domain">laas.fr</email>
              <idno type="idhal" notation="numeric">941895</idno>
              <idno type="halauthorid" notation="string">713315-941895</idno>
              <orgName ref="#struct-389612"/>
              <affiliation ref="#struct-389612"/>
              <affiliation ref="#struct-459"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">B</forename>
                <surname>Lambert</surname>
              </persName>
              <idno type="halauthorid">770010-0</idno>
              <affiliation ref="#struct-240038"/>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Jean-Guy</forename>
                <surname>Tartarin</surname>
              </persName>
              <email type="md5">db46fd9406c901b50f2f98276459a82a</email>
              <email type="domain">laas.fr</email>
            </editor>
            <funder ref="#projanr-33612"/>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2016-07-11 10:50:26</date>
              <date type="whenModified">2025-12-12 09:41:22</date>
              <date type="whenReleased">2016-07-13 10:03:37</date>
              <date type="whenProduced">2011-10-09</date>
              <date type="whenEndEmbargoed">2016-07-11</date>
              <ref type="file" target="https://hal.science/hal-01343977v1/document">
                <date notBefore="2016-07-11"/>
              </ref>
              <ref type="file" subtype="author" n="1" target="https://hal.science/hal-01343977v1/file/attente_EuMC_2011_Manchester.pdf" id="file-1343977-1425481">
                <date notBefore="2016-07-11"/>
              </ref>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="127610">
                <persName>
                  <forename>Jean-Guy</forename>
                  <surname>Tartarin</surname>
                </persName>
                <email type="md5">db46fd9406c901b50f2f98276459a82a</email>
                <email type="domain">laas.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-01343977</idno>
            <idno type="halUri">https://hal.science/hal-01343977</idno>
            <idno type="halBibtex">tartarin:hal-01343977</idno>
            <idno type="halRefHtml">&lt;i&gt;European Microwave Integrated Circuits Conference (EuMIC 2011)&lt;/i&gt;, Oct 2011, Manchester, United Kingdom. pp.438-441</idno>
            <idno type="halRef">European Microwave Integrated Circuits Conference (EuMIC 2011), Oct 2011, Manchester, United Kingdom. pp.438-441</idno>
            <availability status="restricted">
              <licence target="https://about.hal.science/hal-authorisation-v1/">HAL Authorization<ref corresp="#file-1343977-1425481"/></licence>
            </availability>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="UNIV-TLSE2">Université Toulouse 2</idno>
            <idno type="stamp" n="UNIV-TLSE3">Université de Toulouse</idno>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="INSA-TOULOUSE">Institut National des Sciences Appliquées de Toulouse</idno>
            <idno type="stamp" n="LAAS">Laboratoire d'analyse et d'architecture des systèmes</idno>
            <idno type="stamp" n="LAAS-MOST" corresp="LAAS-HYPERFREQUENCES-ET-OPTIQUE">Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications</idno>
            <idno type="stamp" n="UT1-CAPITOLE">Université Toulouse 1 Capitole</idno>
            <idno type="stamp" n="LAAS-I2C" corresp="LAAS">Service Instrumentation Conception Caractérisation</idno>
            <idno type="stamp" n="LAAS-HYPERFREQUENCES-ET-OPTIQUE" corresp="LAAS">LAAS-Hyperfréquences et Optique</idno>
            <idno type="stamp" n="INSA-GROUPE">Groupe INSA</idno>
            <idno type="stamp" n="ANR">ANR</idno>
            <idno type="stamp" n="TOULOUSE-INP">Toulouse - INP</idno>
            <idno type="stamp" n="UNIV-UT3">Université Toulouse 3</idno>
            <idno type="stamp" n="UT3-INP">Université de Toulouse / Toulouse INP</idno>
            <idno type="stamp" n="UT3-TOULOUSEINP">Université de Toulouse / Toulouse INP</idno>
            <idno type="stamp" n="TEST7-HALCNRS">test 7 du portail hal cnrs</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="2">International</note>
            <note type="invited" n="0">No</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
            <note type="proceedings" n="1">Yes</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies</title>
                <author role="aut">
                  <persName>
                    <forename type="first">Jean-Guy</forename>
                    <surname>Tartarin</surname>
                  </persName>
                  <email type="md5">db46fd9406c901b50f2f98276459a82a</email>
                  <email type="domain">laas.fr</email>
                  <idno type="idhal" notation="string">jean-guy-tartarin</idno>
                  <idno type="idhal" notation="numeric">6047</idno>
                  <idno type="halauthorid" notation="string">19767-6047</idno>
                  <idno type="ORCID">https://orcid.org/0000-0001-5801-178X</idno>
                  <idno type="IDREF">https://www.idref.fr/08322906X</idno>
                  <orgName ref="#struct-388658"/>
                  <affiliation ref="#struct-388658"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Serge</forename>
                    <surname>Karboyan</surname>
                  </persName>
                  <idno type="halauthorid">824978-0</idno>
                  <affiliation ref="#struct-388658"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">François</forename>
                    <surname>Olivié</surname>
                  </persName>
                  <email type="md5">a74cc352c2e80f4e071083919b7eb927</email>
                  <email type="domain">laas.fr</email>
                  <idno type="idhal" notation="numeric">831039</idno>
                  <idno type="halauthorid" notation="string">117896-831039</idno>
                  <orgName ref="#struct-392533"/>
                  <affiliation ref="#struct-459"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Guilhem</forename>
                    <surname>Astre</surname>
                  </persName>
                  <idno type="halauthorid">713323-0</idno>
                  <affiliation ref="#struct-217752"/>
                  <affiliation ref="#struct-388658"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Laurent</forename>
                    <surname>Bary</surname>
                  </persName>
                  <email type="md5">24f1a72b4ef39fda0a40328d8440cc0c</email>
                  <email type="domain">laas.fr</email>
                  <idno type="idhal" notation="numeric">941895</idno>
                  <idno type="halauthorid" notation="string">713315-941895</idno>
                  <orgName ref="#struct-389612"/>
                  <affiliation ref="#struct-389612"/>
                  <affiliation ref="#struct-459"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">B</forename>
                    <surname>Lambert</surname>
                  </persName>
                  <idno type="halauthorid">770010-0</idno>
                  <affiliation ref="#struct-240038"/>
                </author>
              </analytic>
              <monogr>
                <idno type="localRef">Rapport LAAS n° 11545</idno>
                <title level="m">2011 European Microwave Integrated Circuits Conference (EuMIC)</title>
                <meeting>
                  <title>European Microwave Integrated Circuits Conference (EuMIC 2011)</title>
                  <date type="start">2011-10-09</date>
                  <date type="end">2011-10-14</date>
                  <settlement>Manchester</settlement>
                  <country key="GB">United Kingdom</country>
                </meeting>
                <imprint>
                  <publisher>IEEE</publisher>
                  <biblScope unit="pp">438-441</biblScope>
                </imprint>
              </monogr>
              <ref type="publisher">http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=6102866&amp;abstractAccess=no&amp;userType=inst</ref>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <keywords scheme="author">
                <term xml:lang="en">I-DLTS</term>
                <term xml:lang="en">low frequency noise</term>
                <term xml:lang="en">gate-lag</term>
                <term xml:lang="en">drain-lag</term>
                <term xml:lang="en">reliability</term>
                <term xml:lang="en">GaN HEMT</term>
                <term xml:lang="en">trapping effects</term>
              </keywords>
              <classCode scheme="halDomain" n="spi.nano">Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics</classCode>
              <classCode scheme="halTypology" n="COMM">Conference papers</classCode>
              <classCode scheme="halOldTypology" n="COMM">Conference papers</classCode>
              <classCode scheme="halTreeTypology" n="COMM">Conference papers</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors dedicated to high frequency applications. However, experiencing reliability studies mechanisms on a given technology cannot be carried out to another one, depending on changes of the doping, passivation layer thickness or material, content of Al or In in the ternary composition of the channel… Among the more problematic causes of degradation for high electron mobility transistors (HEMT), traps need to be accurately identified: this paper proposes the jointed expertise using three different experimental workbenches to identify trapping-detrapping effects and free charges effects in AlGaN/GaN HEMT devices over samples from a European foundry. Different samples have been stressed using DC biased devices at ambient temperatures of 25°C and 150°C, and using HTRB stresses at 150°C. Stressed devices and virgin samples are measured using pulsed I-V characterizations (lag effects attributed to free charges), current Deep Level Transient Spectroscopy (I-DLTS) measurements and low frequency noise (LFN) measurements. Each experimental setup has its own specificities, and allows the determination of activation energies and capture sections of the traps, or how these traps or charges affect the transistor performance under realistic HF conditions. Drain-Lag and Gate-lag signatures evidence the large stress effect on the devices, but with different nuances partially correlated to gate leakage currents. Traps measured with I-DTLS and LFN techniques evidence partially correlated origins, and thermally activated traps can be discriminated from electrically activated ones. This approach gives a deeper insight of the prevailing mechanisms causing partial or total failures of the AlGaN/GaN devices.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="researchteam" xml:id="struct-388658" status="OLD">
          <orgName>Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications</orgName>
          <orgName type="acronym">LAAS-MOST</orgName>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.laas.fr/public/fr/most</ref>
          </desc>
          <listRelation>
            <relation active="#struct-459" type="direct"/>
            <relation active="#struct-81148" type="indirect"/>
            <relation name="443875" active="#struct-443875" type="indirect"/>
            <relation active="#struct-116255" type="indirect"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation active="#struct-443875" type="indirect"/>
            <relation active="#struct-116256" type="indirect"/>
            <relation active="#struct-217752" type="indirect"/>
            <relation name="UPR8001" active="#struct-441569" type="indirect"/>
            <relation active="#struct-448187" type="indirect"/>
          </listRelation>
        </org>
        <org type="laboratory" xml:id="struct-459" status="OLD">
          <idno type="IdRef">199278792</idno>
          <idno type="ISNI">0000 0001 2188 216X </idno>
          <idno type="RNSR">199517454Y</idno>
          <idno type="ROR">https://ror.org/03vcm6439</idno>
          <orgName>Laboratoire d'analyse et d'architecture des systèmes</orgName>
          <orgName type="acronym">LAAS</orgName>
          <date type="start">1968-01-01</date>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <addrLine>7 Av du colonel Roche 31077 TOULOUSE CEDEX 4</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.laas.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-81148" type="direct"/>
            <relation name="443875" active="#struct-443875" type="indirect"/>
            <relation active="#struct-116255" type="direct"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation active="#struct-443875" type="indirect"/>
            <relation active="#struct-116256" type="direct"/>
            <relation active="#struct-217752" type="direct"/>
            <relation name="UPR8001" active="#struct-441569" type="direct"/>
            <relation active="#struct-448187" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-217752" status="OLD">
          <idno type="IdRef">026404672</idno>
          <idno type="ISNI">0000000121617331</idno>
          <idno type="ROR">https://ror.org/02v6kpv12</idno>
          <idno type="Wikidata">Q1273188</idno>
          <orgName>Université Toulouse III - Paul Sabatier</orgName>
          <orgName type="acronym">UT3</orgName>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <addrLine>118 route de Narbonne - 31062 Toulouse</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-tlse3.fr/</ref>
          </desc>
          <listRelation>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="researchteam" xml:id="struct-389612" status="OLD">
          <orgName>Service Instrumentation Conception Caractérisation</orgName>
          <orgName type="acronym">LAAS-I2C</orgName>
          <date type="end">2025-01-01</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.laas.fr/public/fr/i2c</ref>
          </desc>
          <listRelation>
            <relation active="#struct-459" type="direct"/>
            <relation active="#struct-81148" type="indirect"/>
            <relation name="443875" active="#struct-443875" type="indirect"/>
            <relation active="#struct-116255" type="indirect"/>
            <relation active="#struct-301232" type="indirect"/>
            <relation active="#struct-443875" type="indirect"/>
            <relation active="#struct-116256" type="indirect"/>
            <relation active="#struct-217752" type="indirect"/>
            <relation name="UPR8001" active="#struct-441569" type="indirect"/>
            <relation active="#struct-448187" type="indirect"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-240038" status="VALID">
          <idno type="ROR">https://ror.org/034zb3z40</idno>
          <orgName>United Monolithic Semiconductors</orgName>
          <orgName type="acronym">UMS</orgName>
          <desc>
            <address>
              <addrLine>Bâtiment Charmille, Parc SILIC de Villebon-Courtaboeuf, 10 avenue du Québec, 91140 Villebon-sur-Yvette</addrLine>
              <country key="FR"/>
            </address>
          </desc>
        </org>
        <org type="institution" xml:id="struct-81148" status="VALID">
          <idno type="IdRef">026404354</idno>
          <idno type="ISNI">0000000121902837</idno>
          <idno type="ROR">https://ror.org/0443n9e75</idno>
          <orgName>Université Toulouse Capitole</orgName>
          <orgName type="acronym">UT Capitole</orgName>
          <date type="start">1970-01-01</date>
          <desc>
            <address>
              <addrLine>2 rue du Doyen-Gabriel-Marty - 31042 Toulouse Cedex 9</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.ut-capitole.fr/</ref>
          </desc>
          <listRelation>
            <relation name="443875" active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-443875" status="VALID">
          <idno type="ROR">https://ror.org/017tgbk05</idno>
          <orgName>Communauté d'universités et établissements de Toulouse</orgName>
          <orgName type="acronym">Comue de Toulouse</orgName>
          <desc>
            <address>
              <addrLine>41 Allée Jules Guesde, 31000 Toulouse</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.univ-toulouse.fr/</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-116255" status="VALID">
          <idno type="IdRef">026388766</idno>
          <idno type="ISNI">0000 0001 2286 8343</idno>
          <idno type="ROR">https://ror.org/01h8pf755</idno>
          <idno type="Wikidata">Q858979</idno>
          <orgName>Institut National des Sciences Appliquées - Toulouse</orgName>
          <orgName type="acronym">INSA Toulouse</orgName>
          <date type="start">1963-10-21</date>
          <desc>
            <address>
              <addrLine>135, avenue de Rangueil - 31077 Toulouse cedex 4</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.insa-toulouse.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-301232" type="direct"/>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-301232" status="VALID">
          <idno type="IdRef">162105150</idno>
          <orgName>Institut National des Sciences Appliquées</orgName>
          <orgName type="acronym">INSA</orgName>
          <desc>
            <address>
              <country key="FR"/>
            </address>
          </desc>
        </org>
        <org type="institution" xml:id="struct-116256" status="VALID">
          <idno type="IdRef">026403994</idno>
          <idno type="ROR">https://ror.org/04ezk3x31</idno>
          <orgName>Université Toulouse - Jean Jaurès</orgName>
          <orgName type="acronym">UT2J</orgName>
          <date type="start">1971-01-01</date>
          <desc>
            <address>
              <addrLine>5 allées Antonio Machado - 31058 Toulouse Cedex 9</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-tlse2.fr</ref>
          </desc>
          <listRelation>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-448187" status="VALID">
          <idno type="IdRef">026388820</idno>
          <idno type="ISNI">0000000121766169</idno>
          <idno type="ROR">https://ror.org/033p9g875</idno>
          <orgName>Institut National Polytechnique (Toulouse)</orgName>
          <orgName type="acronym">Toulouse INP</orgName>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.inp-toulouse.fr/</ref>
          </desc>
          <listRelation>
            <relation active="#struct-443875" type="direct"/>
          </listRelation>
        </org>
      </listOrg>
      <listOrg type="projects">
        <org type="anrProject" xml:id="projanr-33612" status="VALID">
          <idno type="anr">ANR-10-VERS-0006</idno>
          <idno type="program">RESEAUX DU FUTUR ET SERVICES</idno>
          <orgName>ReAGaN</orgName>
          <desc>Analyse de la fiabilité de technologies GaN. Développement d'une léthodologie innovante d'analyse physique et électrique à l'échelle du composant</desc>
          <date type="start">2010</date>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>