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Communication Dans Un Congrès Année : 2015

New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements

Résumé

This paper proposes a diagnostic tool dedicated to the analysis of the Schottky Barrier Height (SBH). The proposed method is mainly relevant for studying gate related failure mechanisms in electronic devices. In this case, the SBH of gallium nitride High Electron Mobility Transistors (HEMTs) is investigated in terms of mean SBH's value and dispersion. It is shown that according to given temperature and gate current ranges, linear relationships can be extracted between the mean SBH and the inhomogeneities that appear in forward-biased diode. These behaviors are able to highlight different kind of defects, revealing possible weaknesses of the devices.
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Dates et versions

hal-01343966 , version 1 (11-07-2016)

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Oana Lazar, Jean-Guy Tartarin, B Lambert, C Moreau, J.L. Roux, et al.. New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements. International Microwave Symposium (IMS 2015), May 2015, Phoenix, AZ, United States. pp.1-4, ⟨10.1109/MWSYM.2015.7166789⟩. ⟨hal-01343966⟩
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