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Communication Dans Un Congrès Année : 2010

Trapping Related Degradation Effects in AlGaN/GaN HEMT

Résumé

Reliability in GaN based devices still motivates numerous studies because the involved degradation mechanisms are different from that in III-V narrow bandgap devices. Direct investigations on high electron mobility transistors (HEMT) are performed with low frequency noise (LFN) measurements and pulsed electrical characterization. Undoped AlGaN/GaN devices grown on silicon substrate are stressed at a junction temperature of 175°C. Gate-lag and drain-lag measurements method have been performed versus different quiescent bias points and under different pulse conditions. This method allows the discrimination of each lag phenomenon as well as the thermal contribution. Thus it is possible to track and model the trapping mechanisms versus bias conditions. This electrical modelling is completed with LFN measurements, which is largely used for reliability investigations. I. INTRODUCTION AlGaN/GaN high electron mobility transistors (HEMT) stand as an interesting solution to substitute GaAs and SiGe technologies for power and high frequency applications. They take advantages from higher breakdown voltage, higher power density, higher thermal conductivity and from very good low noise capabilities [1]. Hence, GaN devices can pretend to be used in integrated transceivers for power amplification, low noise amplification, frequency synthesis and mixers. From now on, reliability studies are on going to develop behavioural models and to focus on the degradation trends (drift in power, PAE) under RF, DC or temperature stress [2]. Among the available solutions of characterization, we later on present a method making use of I(V) electrical and low frequency noise (LFN) measurements. The crossed interpretations of data issued from these characterizations are suitable to extract and model trapping phenomena related to lag effects. These two different techniques are next used to evaluate traps related degradation on devices which have been stressed under high junction temperature conditions (175°C) during 2000 hours. LFN and I(V) pulsed measurements are applied to stressed devices and test samples. A gate-lag and drain-lag extraction method is developed to evaluate and discriminate the nature of trapping effects as well as their evolution before and after stress. The
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Dates et versions

hal-01343334 , version 1 (08-07-2016)

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  • HAL Id : hal-01343334 , version 1

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Guilhem Astre, Jean-Guy Tartarin, B Lambert. Trapping Related Degradation Effects in AlGaN/GaN HEMT. EuMC 2010, Sep 2010, Paris, France. ⟨hal-01343334⟩
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