Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor deposition - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2016

Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor deposition

Résumé

Ga2O3 thin films, alloyed with SnO2, ranging from 0 to 15 at% of Sn in composition, were grown by hot wire chemical vapor deposition on C-oriented sapphire. No conductivity was measured on the as-grown or annealed at 1000 °C samples while UV transparency was high. This contradicts the literature works on the effect of Sn4+ doping in films obtained by other methods. Besides, X-ray diffraction patterns showed the epitaxial stabilization of a new phase. The films treated by radio-frequency plasma (hydrogen and argon) presented a decrease in transparency and an increase in conductivity. The conductivity also depended on the SnO2 concentration. The hydrogen doping levels as well as polarons (due to oxygen non-stoichiometry) are suspected to play a role on the conductivity mechanism.

Domaines

Matériaux
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Dates et versions

hal-01341006 , version 1 (03-07-2016)

Identifiants

  • HAL Id : hal-01341006 , version 1

Citer

Alban Maertens, Samuel Margueron, Frédéric Genty, Adulfas Abrutis, Thierry Belmonte, et al.. Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor deposition. Compound Semicondcutor Week 2016, Jun 2016, Toyama, Japan. . ⟨hal-01341006⟩
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