Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol. - Archive ouverte HAL
Communication Dans Un Congrès Année : 2013

Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol.

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hal-01315415 , version 1 (13-05-2016)

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  • HAL Id : hal-01315415 , version 1

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P. Chiquet, P. Masson, Gilles Micolau, R. Laffont, F. Lalande, et al.. Determination of physical properties of semiconductor-oxide-semiconductor structures using a new fast gate current measurement protocol.. 11th IEEE International Conference on Solid Dielectrics , Jul 2013, Bologne, Italy. ⟨hal-01315415⟩
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