Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots. - Archive ouverte HAL Access content directly
Journal Articles Japanese Journal of Applied Physics, part 2 : Letters Year : 2007

Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.

Thierry Taliercio
Pierre Lefebvre
Thierry Guillet
Pierre Valvin
  • Function : Author
  • PersonId : 884415
Thierry Bretagnon
  • Function : Author
  • PersonId : 860790
Bernard Gil
  • Function : Author
  • PersonId : 860800

Abstract

The photoluminescence (PL) properties of InAs/(Ga,In)(N,As) quantum dots (QDs) were analyzed and compared to those of InAs/(Ga,In)As QDs. While the PL intensity and the PL decay times of these samples are similar at low temperature, their decrease when the temperature increases is stronger in the case of InAs/(Ga,In)(N,As) QDs. This is attributed to a weaker confinement of the carriers and to the presence of structural defects as revealed by the analysis of plane-view and cross-section transmission electron microscopy images.
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Dates and versions

hal-01304760 , version 1 (20-04-2016)

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Maxime Hugues, Mirja Richter, Jean-Michel Chauveau, Benjamin Damilano, Jean-Yves Duboz, et al.. Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.. Japanese Journal of Applied Physics, part 2 : Letters, 2007, 46 (14), pp.L317. ⟨10.1143/JJAP.46.L317⟩. ⟨hal-01304760⟩
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