Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes. - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2001

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Abstract

We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8
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hal-01303205 , version 1 (16-04-2016)

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Pierre Lefebvre, Thierry Taliercio, Aurélien Morel, Jacques Allègre, Mathieu Gallart, et al.. Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.. Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩. ⟨hal-01303205⟩
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