Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.
Résumé
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8
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https://hal.science/hal-01303205
Soumis le : samedi 16 avril 2016-19:17:13
Dernière modification le : lundi 18 novembre 2024-16:57:02
Citer
Pierre Lefebvre, Thierry Taliercio, Aurélien Morel, Jacques Allègre, Mathieu Gallart, et al.. Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.. Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩. ⟨hal-01303205⟩
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