@article{hamdoun:hal-01300890, TITLE = {{Characterisation and analytical modeling of GaN HEMT-based varactor diodes}}, AUTHOR = {Hamdoun, Abdelaziz and Roy, L. and Himdi, Mohamed and Lafond, Olivier}, URL = {https://hal-univ-rennes1.archives-ouvertes.fr/hal-01300890}, JOURNAL = {{Electronics Letters}}, PUBLISHER = {{IET}}, VOLUME = {51}, NUMBER = {23}, PAGES = {1930-1932}, YEAR = {2015}, DOI = {10.1049/el.2015.2362}, KEYWORDS = {equivalent circuits ; gallium compounds ; GaN ; HEMT based varactor diodes ; high electron mobility transistors ; III-V semiconductors ; microwave diodes ; microwave field effect transistors ; physical equivalent circuit ; size 0.5 mum ; size 0.15 mum ; small signal measurements ; varactors ; wide band gap semiconductors}, PDF = {https://hal-univ-rennes1.archives-ouvertes.fr/hal-01300890/file/Characterisation%20and%20analytical%20modelling%20of%20GaN%20HEMT-based%20varactor%20diodes_accepted.pdf}, HAL_ID = {hal-01300890}, HAL_VERSION = {v1}, }