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Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2008

Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition

Résumé

The lateral growth of Ge on, both, chemically and thermally formed silicon oxide layers, from nanoscale silicon seed is studied. We have developed a method using standard local oxidation of silicon to create well-localized nanoscale silicon seeds that enable to grow Ge on thick thermal silicon oxide. The germanium growth starts selectively from the silicon seed lines and proceeds by wetting the SiO(2) layer. Analysis by high-resolution transmission electron microscopy have shown that Ge layers grown above silicon oxide were perfectly monocrystalline and are free of defect. The only detected defects are situated at the Ge/Si interface. Published by Elsevier Ltd.

Dates et versions

hal-01293141 , version 1 (24-03-2016)

Identifiants

Citer

V. D. Cammilleri, V. Yam, F. Fossard, C. Renard, D. Bouchier, et al.. Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition. Materials Science in Semiconductor Processing, 2008, 11 (5-6), pp.214-216. ⟨10.1016/j.mssp.2008.07.003⟩. ⟨hal-01293141⟩
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