Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2005

Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals

L Ke
  • Fonction : Auteur
Y Shishkin
  • Fonction : Auteur
Rp Devaty
  • Fonction : Auteur
Wj Choyke
  • Fonction : Auteur

Résumé

The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C-3V symmetry, g(//)=2.00238 and g⊥=2.00317, central hyperfine interaction (CHF) with one carbon atom and A(B//)[(001])=48G and superhyperfine (SHF) interaction with three equivalent Si neighbouf atoms and T-B//[001]=12.4G, allow us to attribute the center to a sp(3) coordinated carbon dangling bond center, P-bC.
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Dates et versions

hal-01288832 , version 1 (15-03-2016)

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  • HAL Id : hal-01288832 , version 1

Citer

Jurgen von Bardeleben, Jean-Louis Cantin, L Ke, Y Shishkin, Rp Devaty, et al.. Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.273-276. ⟨hal-01288832⟩
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