Due to its resistance to oxidation, TaSiN is a promising candidate as an electrically conductive barrier layer for integration of high permittivity oxides in advanced memory devices. In this study we report on the properties of TaSiN thin films deposited by reactive magnetron sputtering of a TaSi2 target in an Ar/N-2 atmosphere. We especially focus on the influence of deposition parameters (pressure and power density) on TaSiN film properties. To study oxidation resistance, films are processed by rapid thermal annealing in O-18(2) at 650 degrees C. The concentration depth profiles of O-18 were measured via the narrow resonance of O-18(p,alpha)N-15 at 151 keV (FWHM = 100 eV). Whatever the power density, films deposited above 2 Pa are porous and exhibit high resistivity. Ta26Si47N27 deposited at 0.5 Pa with a power density of 2.65 W/cm(2) exhibits high density, low resistivity, and good oxidation resistance. (c) 2006 Elsevier B.V. All rights reserved.