Cryoetching processes applied to ULK material
Résumé
Cryogenic etching processes were successfully applied to ultra-low K (ULK) material for
interconnect applications in back-end-of-the-line part of advanced CMOS technology. The objective
of our experiments is to minimize the plasma induced carbon depletion. The effect of the wafer
cooling is clearly evidenced by the characterization data obtained by FTIR, ellipsometry, mass
spectrometry and SEM after plasma processes at different wafer temperatures.
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DPS 2015 Remi Dussart abstract - final version.pdf (433.27 Ko)
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