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Communication Dans Un Congrès Année : 2015

Cryoetching processes applied to ULK material

Résumé

Cryogenic etching processes were successfully applied to ultra-low K (ULK) material for interconnect applications in back-end-of-the-line part of advanced CMOS technology. The objective of our experiments is to minimize the plasma induced carbon depletion. The effect of the wafer cooling is clearly evidenced by the characterization data obtained by FTIR, ellipsometry, mass spectrometry and SEM after plasma processes at different wafer temperatures.
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Dates et versions

hal-01287233 , version 1 (12-03-2016)

Identifiants

  • HAL Id : hal-01287233 , version 1

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Floriane Leroy, Thomas Tillocher, Philippe Lefaucheux, Remi Dussart, Christian Dussarat, et al.. Cryoetching processes applied to ULK material. 37th International Symposium on Dry process , Nov 2015, Awaji, Japan. ⟨hal-01287233⟩
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