Large effects of pressure induced inelastic channels on interface thermal conductance - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2012

Large effects of pressure induced inelastic channels on interface thermal conductance

Résumé

A large effect of pressure on the thermal conductance of silicon/carbon nanotube junctions is shown to result from induced anharmonicity at the interface. Through atomistic simulations, we demonstrate the opening of pressure induced inelastic phonon channels, which are responsible for a several fold increase of the thermal conductance.
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Dates et versions

hal-01285849 , version 1 (09-03-2016)

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Yann Chalopin, Natalio Mingo, Jiankuai Diao, Deepak Srivastava, Sebastian Volz. Large effects of pressure induced inelastic channels on interface thermal conductance. Applied Physics Letters, 2012, 101 (22), pp.221903. ⟨10.1063/1.4766266⟩. ⟨hal-01285849⟩
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