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Article Dans Une Revue Solid-State Electronics Année : 2015

Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

Résumé

In this paper, we present a comparative study on small-signal modeling of AlN/GaN/AlGaN doublehetero-structure high electron mobility transistors (HEMTs) grown on silicon (Si) and silicon carbide(SiC) substrate. The traditional small signal equivalent circuit model is modified to take into accountthe transmission loss mechanism of coplanar waveguide (CPW) line which cannot be neglected at highfrequencies. CPWs and HEMTs-on-AlN/GaN/AlGaN epitaxial layers are fabricated on both the Si andSiC substrates. S-parameter measurements at room temperature are performed over the frequency rangefrom 0.5 GHz to 40 GHz. Transmission loss of CPW lines are modeled with a distributed transmission line(TL) network and an equivalent circuit model is included in the small-signal transistor model topology.Measurements and simulations are compared and found to be in good agreement.
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hal-01285677 , version 1 (09-03-2016)

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  • HAL Id : hal-01285677 , version 1

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A.K. Sahoo, N.K. Subramani, Jean-Christophe Nallatamby, L. Sylvain, Christophe Loyez, et al.. Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism. Solid-State Electronics, 2015. ⟨hal-01285677⟩
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