Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Magnetism and Magnetic Materials Année : 2015

Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

Thomas Hauet
François Montaigne
Stéphane Andrieu

Résumé

Interplay between voltage induced magnetic anisotropy transition and voltage induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems.
Fichier principal
Vignette du fichier
Voltage_MTJ_06072015.pdf (400.75 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01284021 , version 1 (18-07-2016)

Identifiants

Citer

Ia. M. Lytvynenko, Thomas Hauet, François Montaigne, V. V. Bibyk, Stéphane Andrieu. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy. Journal of Magnetism and Magnetic Materials, 2015, 396, pp.333-337. ⟨10.1016/j.jmmm.2015.08.064⟩. ⟨hal-01284021⟩
37 Consultations
91 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More