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Article Dans Une Revue Journal of Physics D: Applied Physics Année : 2015

MgO magnetic tunnel junctions of enduring F-type upon annealing

Résumé

The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Irel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO.
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Dates et versions

hal-01284014 , version 1 (07-03-2016)

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F. Schleicher, U. Halisdemir, E. Urbain, Daniel Lacour, M. Gallart, et al.. MgO magnetic tunnel junctions of enduring F-type upon annealing. Journal of Physics D: Applied Physics, 2015, 48 (43), ⟨10.1088/0022-3727/48/43/435004⟩. ⟨hal-01284014⟩
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