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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2015

Enhanced magnetoresistance by monoatomic roughness in epitaxial Fe/MgO/Fe tunnel junctions

A. Duluard
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Christine Bellouard
Yuan Lu
Michel Hehn
Daniel Lacour
François Montaigne
Stéphane Andrieu
F. Bonell

Résumé

Interfacial effects on spin and symmetry filtering in single-crystal Fe(001)/MgO/Fe magnetic tunnel junctions are investigated with the insertion of a Fe monoatomic step at the bottom MgO interface. After annealing, the atomically flat bottom electrode is covered by a fractional part of a Fe monoatomic layer resulting in two-dimensional Fe islands that are separated for low coverages and percolated above around half a monolayer. The magnetotransport properties of the junctions are studied as a function of this Fe sublayer coverage that is varied from 0 to 1 monolayer. Surprisingly, the magnetoresistance ratio exhibits a maximum for a coverage around half a monolayer. Tunneling spectroscopy experiments performed at low temperature allow relating this result to the decrease of the contribution of the interfacial resonance state to the conductance of the junction.

Dates et versions

hal-01284012 , version 1 (07-03-2016)

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Citer

A. Duluard, Christine Bellouard, Yuan Lu, Michel Hehn, Daniel Lacour, et al.. Enhanced magnetoresistance by monoatomic roughness in epitaxial Fe/MgO/Fe tunnel junctions. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (17), ⟨10.1103/PhysRevB.91.174403⟩. ⟨hal-01284012⟩
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