Enhanced magnetoresistance by monoatomic roughness in epitaxial Fe/MgO/Fe tunnel junctions - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2015

Enhanced magnetoresistance by monoatomic roughness in epitaxial Fe/MgO/Fe tunnel junctions

A. Duluard
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Christine Bellouard
Yuan Lu
Michel Hehn
Daniel Lacour
François Montaigne
Stéphane Andrieu
F. Bonell

Résumé

Interfacial effects on spin and symmetry filtering in single-crystal Fe(001)/MgO/Fe magnetic tunnel junctions are investigated with the insertion of a Fe monoatomic step at the bottom MgO interface. After annealing, the atomically flat bottom electrode is covered by a fractional part of a Fe monoatomic layer resulting in two-dimensional Fe islands that are separated for low coverages and percolated above around half a monolayer. The magnetotransport properties of the junctions are studied as a function of this Fe sublayer coverage that is varied from 0 to 1 monolayer. Surprisingly, the magnetoresistance ratio exhibits a maximum for a coverage around half a monolayer. Tunneling spectroscopy experiments performed at low temperature allow relating this result to the decrease of the contribution of the interfacial resonance state to the conductance of the junction.
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hal-01284012 , version 1 (21-08-2024)

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A. Duluard, Christine Bellouard, Yuan Lu, Michel Hehn, Daniel Lacour, et al.. Enhanced magnetoresistance by monoatomic roughness in epitaxial Fe/MgO/Fe tunnel junctions. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (17), ⟨10.1103/PhysRevB.91.174403⟩. ⟨hal-01284012⟩
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