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Article Dans Une Revue Applied Physics Letters Année : 2014

Electrical control of interfacial trapping for magnetic tunnel transistor on silicon

Yuan Lu
Daniel Lacour
Sylvain Le Gall
François Montaigne
Michel Hehn

Résumé

We demonstrate an electrical control of an interfacial trapping effect for hot electrons injected in silicon by studying a magnetic tunnel transistor on wafer bonded Si substrate. Below 25 K, hot electrons are trapped at the Cu/Si interface, resulting in collector current suppression through scattering in both parallel and antiparallel magnetic configurations. Consequently, the magneto-current ratio strongly decreases from 300% at 27K to 30% at 22 K. The application of a relatively small electric field (similar to 333 V/cm) across the Cu/Si interface is enough to strip the trapped electrons and restore the magneto-current ratio at low temperature. We also present a model taking into account the effects of both electric field and temperature that closely reproduces the experimental results and allows extraction of the trapping binding energy (similar to 1.6meV).
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Dates et versions

hal-01282860 , version 1 (04-03-2016)

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Yuan Lu, Daniel Lacour, Gwladys Lengaigne, Sylvain Le Gall, Stéphane Suire, et al.. Electrical control of interfacial trapping for magnetic tunnel transistor on silicon. Applied Physics Letters, 2014, 104 (4), ⟨10.1063/1.4863689⟩. ⟨hal-01282860⟩
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