Electrical control of interfacial trapping for magnetic tunnel transistor on silicon
Résumé
We demonstrate an electrical control of an interfacial trapping effect for hot electrons injected in silicon by studying a magnetic tunnel transistor on wafer bonded Si substrate. Below 25 K, hot electrons are trapped at the Cu/Si interface, resulting in collector current suppression through scattering in both parallel and antiparallel magnetic configurations. Consequently, the magneto-current ratio strongly decreases from 300% at 27K to 30% at 22 K. The application of a relatively small electric field (similar to 333 V/cm) across the Cu/Si interface is enough to strip the trapped electrons and restore the magneto-current ratio at low temperature. We also present a model taking into account the effects of both electric field and temperature that closely reproduces the experimental results and allows extraction of the trapping binding energy (similar to 1.6meV).
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Electrical control of interfacial trapping for magnetic tunnel transistor on silicon-042408_1_online.pdf (2.07 Mo)
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