Radiative recombination in GaN nanocrystals at high intensities of optical excitation - Archive ouverte HAL
Article Dans Une Revue Fizika i tekhnika poluprovodnicov / Semiconductors Année : 2005

Radiative recombination in GaN nanocrystals at high intensities of optical excitation

An Gruzintsev
  • Fonction : Auteur
An Red'Kin
  • Fonction : Auteur

Résumé

The spectra of spontaneous UV luminescence of GaN nanocrystals excited by optical pumping at power densities ranging from 50 W/cm(2) to 50 MW/cm(2) are studied. At room temperature, radiation peaks related to the emission of free excitons and recombination of electron-hole plasma are revealed. The spectral characteristics of the emission of the electron-hole plasma in GaN is studied in the wide temperature range of 77-550 K. (c) 2005 Pleiades Publishing, Inc.

Dates et versions

hal-01281576 , version 1 (02-03-2016)

Identifiants

Citer

An Gruzintsev, An Red'Kin, Carlos Barthou. Radiative recombination in GaN nanocrystals at high intensities of optical excitation. Fizika i tekhnika poluprovodnicov / Semiconductors, 2005, 39 (10), pp.1158-1161. ⟨10.1134/1.2085263⟩. ⟨hal-01281576⟩
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