Radiative recombination in GaN nanocrystals at high intensities of optical excitation
Résumé
The spectra of spontaneous UV luminescence of GaN nanocrystals excited by optical pumping at power densities ranging from 50 W/cm(2) to 50 MW/cm(2) are studied. At room temperature, radiation peaks related to the emission of free excitons and recombination of electron-hole plasma are revealed. The spectral characteristics of the emission of the electron-hole plasma in GaN is studied in the wide temperature range of 77-550 K. (c) 2005 Pleiades Publishing, Inc.