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Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2007

Growth of ZrSnTiO thin films by pulsed-laser deposition

M. Nistor
A. Ioachim
  • Fonction : Auteur
D. Defourneau
  • Fonction : Auteur

Résumé

The formation of ZrSnTiO thin films by pulsed-laser deposition has been studied. By the complementary use of Rutherford backscattering spectrometry, x-ray diffraction and scanning electron microscopy, the composition, crystalline structure and surface morphology of the films were investigated. The optimum conditions for the growth of dense, stoichiometric and crystalline films were determined, i.e. substrate temperature of 700 degrees C and oxygen pressure in the 10(-3)-0.1 mbar range. Such ZrSnTiO films present the classical orthorhombic structure for growth on Si substrates, while the use of MgO single crystal substrates leads to the formation of epitaxial ZrSnTiO films with a tetragonal structure. This previously unobserved ZrSnTiO crystalline phase obtained in thin film form is the result of an epitaxy stabilization effect, and presents improved optical properties as shown by the results of spectroscopic ellipsometry measurements. Moreover, the films grown at 700 degrees C under low oxygen pressure (< 10(-5) mbar) were composed of a Sn rich surface layer superimposed on an understoichiometric zirconium titanate oxide film near the substrate. This last layer, which crystallizes in a cubic structure and has never been reported in bulk material, could be related to the presence of oxygen vacancies in the films grown in these conditions.
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Dates et versions

hal-01281547 , version 1 (02-03-2016)

Identifiants

Citer

M. Nistor, A. Ioachim, B. Gallas, D. Defourneau, J. Perriere, et al.. Growth of ZrSnTiO thin films by pulsed-laser deposition. Journal of Physics: Condensed Matter, 2007, 19 (9), pp.096006. ⟨10.1088/0953-8984/19/9/096006⟩. ⟨hal-01281547⟩
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