Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Sensors Année : 2016

Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems

Résumé

We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time
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Origine : Publication financée par une institution
Licence : CC BY - Paternité

Dates et versions

hal-01277595 , version 1 (26-08-2022)

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Paternité

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Yacine Halfaya, Chris Bishop, Ali Soltani, Sundaram Suresh, Vincent Aubry, et al.. Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems. Sensors, 2016, 16, pp.273. ⟨10.3390/s16030273⟩. ⟨hal-01277595⟩
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