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Article Dans Une Revue Applied Physics Letters Année : 2011

Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices

Résumé

Large internal gains that can be obtained in wide band gap semiconductors-based (GaN and ZnO types) Schottky and/or metal-semiconductor-metal photodetectors are generally accompanied by large dark current and time response. We show that, using quasi-alloy of BGaN/GaN superlattices as the active layer, the dark current can be lowered while maintaining high internal gain (up to 3 x 10(4)) for optical power in the nW range and low time response (few tens of ns) for optical power in the W range. Furthermore, the boron incorporation allows the tuning of the cutoff wavelength

Dates et versions

hal-01277006 , version 1 (21-02-2016)

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H Srour, Jean-Paul Salvestrini, A Ahaitouf, S Gautier, T Moudakir, et al.. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices. Applied Physics Letters, 2011, 99 (22), pp.221101. ⟨10.1063/1.3662974⟩. ⟨hal-01277006⟩
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