New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold - Archive ouverte HAL
Article Dans Une Revue Electronics Letters Année : 1992

New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold

Zeno Toffano
Alain Destrez
  • Fonction : Auteur
  • PersonId : 932392
C. Birocheau
  • Fonction : Auteur
Lotfi Hassine
  • Fonction : Auteur

Résumé

Linewidth measurements of singlemode and multimode InGaAsP lasers were made above and below threshold with adapted interferometers. Linewidth against inverse power plots, Δv = f(1/P), show different Schawlow–Townes slopes above and below threshold. Differences have been observed depending on singlemode or multimode laser behaviour. In the singlemode case the linewidth enhancement factor has been determined (α = 2.6) by extrapolating and correlating results above and below threshold.
Fichier non déposé

Dates et versions

hal-01275170 , version 1 (16-02-2016)

Identifiants

Citer

Zeno Toffano, Alain Destrez, C. Birocheau, Lotfi Hassine. New linewidth enhancement determination method in semiconductor lasers based on spectrum analysis above and below threshold. Electronics Letters, 1992, 28 (1), ⟨10.1049/el:19920006⟩. ⟨hal-01275170⟩

Collections

SUPELEC
57 Consultations
0 Téléchargements

Altmetric

Partager

More