Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2013

Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate

Résumé

We report here the experimental results on a field effect refractive index change into gallium nitride (GaN) structures. This effect is characterized through the common prism-coupling technique with the application of a vertical direct-current electric field. Surface plasmon propagation was used to increase the sensitivity of the electro-optic measurements. We have obtained a large refractive index variation for GaN epilayer, around 1.4×10−2 at 1.55μm wavelength. In order to understand the origin of the index modulation, we have conducted a scanning transmission electron microscopy analysis and discussed the influence of threading dislocations density acting as traps and thermo-optic effect. According to recent works, we observed experimentally the optical response of a non-linear electro-optic effect on GaN on Si(111) substrate and estimated a Kerr coefficient of about 2.14×10−16m2V−2.
Fichier principal
Vignette du fichier
Stolz_2013_1.4776671.pdf (765.55 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-01264135 , version 1 (27-05-2022)

Identifiants

Citer

Arnaud Stolz, Suk-Min Ko, Gilles Patriarche, El Hadj Dogheche, Yong-Hoon Cho, et al.. Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate. Applied Physics Letters, 2013, 102, pp.021905. ⟨10.1063/1.4776671⟩. ⟨hal-01264135⟩
45 Consultations
23 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More