AlGaN-based MQWs emitting at 280nm for Vertical Cavity Surface Emitting Lasers
Résumé
There is currently much research in deep ultraviolet ((DUV: λ<300 nm) III-nitride based light sources that would enable a wide variety of potential applications such as sterilization and high density storage systems. Indeed, it is necessary to develop emitters that are more compact and more stable than common UV lamps for these applications to become practical. In this context, innovative solutions must be found for the realization of Vertical Cavity Surface-Emitting Lasers (VCSELs) operating in the DUV spectral range. The primary barriers to be overcome in the active region of DUV light sources based on AlGaN/AlGaN heterostructures are: (i) the high dislocation density of Al-rich AlGaN epilayers on sapphire or SiC substrates, (ii) the strong quantum-confined Stark effect (QCSE) which leads to the reduction of the emission efficiency and (iii) the anisotropic optical polarization properties of c-plane AlGaN alloys, which are detrimental to surface-emission.
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