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Article Dans Une Revue Journal of Applied Physics Année : 2001

X-ray diffraction investigation of n type porous silicon

Résumé

High resolution x-ray diffraction has been used to study the effect of doping level and illumination on the formation of n-type porous silicon. For highly doped n+ n+- type porous layers prepared in darkness, an unusual increase of the lattice mismatch with the formation time is observed. When the samples are prepared under illumination, a degradation of the crystal quality, increasing with a decrease of the material doping level, is observed. The possible origins of these effects are discussed.
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Dates et versions

hal-01254204 , version 1 (11-01-2016)

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Virginie Chamard, G. Dolino. X-ray diffraction investigation of n type porous silicon. Journal of Applied Physics, 2001, 89, pp.174. ⟨10.1063/1.1326857⟩. ⟨hal-01254204⟩

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