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            <title xml:lang="en">Metastable tetragonal structure of Fe100-xGax epitaxial thin films on ZnSe/GaAs(001) substrate</title>
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                <forename type="first">Mahmoud</forename>
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            <idno type="halRefHtml">&lt;i&gt;Physical Review B: Condensed Matter and Materials Physics (1998-2015)&lt;/i&gt;, 2011, 84 (16), pp.161410. &lt;a target="_blank" href="https://dx.doi.org/10.1103/PhysRevB.84.161410"&gt;&amp;#x27E8;10.1103/PhysRevB.84.161410&amp;#x27E9;&lt;/a&gt;</idno>
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                <title xml:lang="en">Metastable tetragonal structure of Fe100-xGax epitaxial thin films on ZnSe/GaAs(001) substrate</title>
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                    <forename type="first">Mahmoud</forename>
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                    <forename type="first">B.</forename>
                    <surname>Rache Salles</surname>
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                  <idno type="halauthorid">418992-0</idno>
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                  <persName>
                    <forename type="first">J.</forename>
                    <surname>Milano</surname>
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                  <idno type="halauthorid">367595-0</idno>
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                  <persName>
                    <forename type="first">Victor H.</forename>
                    <surname>Etgens</surname>
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                    <forename type="first">Massimiliano</forename>
                    <surname>Marangolo</surname>
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                <title level="j">Physical Review B: Condensed Matter and Materials Physics (1998-2015)</title>
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                  <publisher>American Physical Society</publisher>
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                  <date type="datePub">2011</date>
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              <p>We investigated by x-ray diffraction the Ga concentration dependences of the structural properties of Fe100-xGax (galfenol) thin films grown on a ZnSe/GaAs(001) substrate, a material known for its high magnetostriction. By molecular beam epitaxy (MBE) we grew a series of (001)-oriented layers without in-plane misorientation, ranging from pure Fe up to x = 29.4% Ga. We find a strong Ga-induced tetragonal distortion that conserves the pristine Fe in-plane lattice parameters for all Ga compositions. Supported by theoretical predictions [R. Wu, J. Appl. Phys. 91, 7358 (2002)], we attribute this unusual tetragonal distortion to short-range ordering of Ga-Ga pairs along the [001]-growth direction. The low-temperature and out-of-equilibrium MBE growth regime tends to stabilize a strong deformed tetragonal phase (up to c/a similar to 1.05 for x similar to 29%). This tetragonal structure is fully released by postgrowth annealing.</p>
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