Interrupted Self-Organization of SiGe Pyramids - Archive ouverte HAL
Article Dans Une Revue Physical Review Letters Année : 2013

Interrupted Self-Organization of SiGe Pyramids

Jean-Noël Aqua
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Adrien Gouye
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Antoine Ronda
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Isabelle Berbezier
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Résumé

We investigate the morphological evolution of SiGe quantum dots deposited on Si( 100) during longtime annealing. At low strain, the dots' self-organization begins by an instability and interrupts when (105) pyramids form. This evolution and the resulting island density are quantified by molecular-beam epitaxy. A kinetic model accounting for elasticity, wetting, and anisotropy is shown to reproduce well the experimental findings with appropriate wetting parameters. In this nucleationless regime, a mean-field kinetic analysis explains the existence of nearly stationary states by the vanishing of the coarsening driving force. The island size distribution follows in both experiments and theory the scaling law associated with a single characteristic length scale. DOI: 10.1103/PhysRevLett.110.096101
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Dates et versions

hal-01238959 , version 1 (07-12-2015)

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Jean-Noël Aqua, Adrien Gouye, Antoine Ronda, Thomas Frisch, Isabelle Berbezier. Interrupted Self-Organization of SiGe Pyramids. Physical Review Letters, 2013, 110 (9), pp.096101. ⟨10.1103/PhysRevLett.110.096101⟩. ⟨hal-01238959⟩
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