Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures - Archive ouverte HAL Access content directly
Conference Papers Year : 2015
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hal-01238745 , version 1 (07-12-2015)

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Thi Huong Ngo, Daniel Rosales, Bernard Gil, Pierre Valvin, Benjamin Damilano, et al.. Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures. GALLIUM NITRIDE MATERIALS AND DEVICES X, 2015, san francisco, United States. pp.93630K, ⟨10.1117/12.2076208⟩. ⟨hal-01238745⟩
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