Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2015

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Abstract

XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission

Dates and versions

hal-01238729 , version 1 (07-12-2015)

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K. Lekhal, B. Damilano, H. T. Ngo, Daniel Rosales, P. de Mierry, et al.. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission. Applied Physics Letters, 2015, 106 (14), pp.142101. ⟨10.1063/1.4917222⟩. ⟨hal-01238729⟩
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